| 圖片 | 型號 | 品牌 | 封裝 | 數量 | 描述 | PDF資料 |
|---|---|---|---|---|---|---|
|
RGTH40TS65DGC11 | Rohm Semiconductor | TO-247N | IGBT TRNCH FIELD 650V 40A TO247N | ||
| 參數：Rohm Semiconductor|管件|-|不適用于新設計|溝槽型場截止|650 V|40 A|80 A|2.1V @ 15V，20A|144 W|-|標準... | ||||||
|
STGH30H65DFB-2AG | STMicroelectronics | H2Pak-2 | AUTOMOTIVE-GRADE TRENCH GATE FIE | ||
| 參數：STMicroelectronics|卷帶（TR）,剪切帶（CT）,Digi-Reel? 得捷定制卷帶|Automotive, AEC-Q101|在售|溝槽型場... | ||||||
|
STGP20H60DF | STMicroelectronics | TO-220 | IGBT 600V 40A 167W TO220 | ||
| 參數：STMicroelectronics|管件|-|在售|溝槽型場截止|600 V|40 A|80 A|2V @ 15V，20A|167 W|209μJ（開），26... | ||||||
|
IGB30N60TATMA1 | Infineon Technologies | PG-TO263-3-2 | IGBT 600V 60A 187W TO263-3-2 | ||
| 參數：Infineon Technologies|卷帶（TR）,剪切帶（CT）,Digi-Reel? 得捷定制卷帶|TrenchStop?|在售|溝道|600 V|6... | ||||||
|
STGP15M65DF2 | STMicroelectronics | TO-220 | TRENCH GATE FIELD-STOP IGBT M SE | ||
| 參數：STMicroelectronics|管件|-|在售|溝槽型場截止|650 V|30 A|60 A|2V @ 15V，15A|136 W|90μJ（開），450... | ||||||
|
|
RGTH60TS65DGC11 | Rohm Semiconductor | TO-247N | IGBT TRNCH FIELD 650V 58A TO247N | ||
| 參數：Rohm Semiconductor|管件|-|不適用于新設計|溝槽型場截止|650 V|58 A|120 A|2.1V @ 15V，30A|194 W|-|標... | ||||||
|
|
RGT60TS65DGC11 | Rohm Semiconductor | TO-247N | IGBT TRNCH FIELD 650V 55A TO247N | ||
| 參數：Rohm Semiconductor|管件,管件|-|不適用于新設計|溝槽型場截止|650 V|55 A|90 A|2.1V @ 15V，30A|194 W|-... | ||||||
|
|
RGT50TS65DGC11 | Rohm Semiconductor | TO-247N | IGBT TRNCH FIELD 650V 48A TO247N | ||
| 參數：Rohm Semiconductor|管件,管件|-|不適用于新設計|溝槽型場截止|650 V|48 A|75 A|2.1V @ 15V，25A|174 W|-... | ||||||
.jpg)
|
GT30J65MRB,S1E | Toshiba Semiconductor and Storage | TO-3P（N） | 190 | 650V SILICON N-CHANNEL IGBT, TO- | |
| 參數：Toshiba Semiconductor and Storage|管件|-|在售|-|650 V|60 A|-|1.8V @ 15V，30A|200 W|1.... | ||||||
|
|
IKB30N65ES5ATMA1 | Infineon Technologies | PG-TO263-3 | IGBT TRENCH/FS 650V 62A D2PAK | ||
| 參數：Infineon Technologies|卷帶（TR）,剪切帶（CT）,Digi-Reel? 得捷定制卷帶|TrenchStop? 5|在售|溝槽型場截止|6... | ||||||
|
|
RGTH80TS65DGC11 | Rohm Semiconductor | TO-247N | IGBT TRNCH FIELD 650V 70A TO247N | ||
| 參數：Rohm Semiconductor|管件|-|不適用于新設計|溝槽型場截止|650 V|70 A|160 A|2.1V @ 15V，40A|234 W|-|標... | ||||||
|
IGP30N65F5XKSA1 | Infineon Technologies | PG-TO220-3 | IGBT TRENCH 650V 55A TO220-3 | ||
| 參數：Infineon Technologies|管件|TrenchStop?|在售|溝道|650 V|55 A|90 A|2.1V @ 15V，30A|188 W|... | ||||||
|
GT20N135SRA,S1E | Toshiba Semiconductor and Storage | TO-247 | 6 | D-IGBT TO-247 VCES=1350V IC=40A | |
| 參數：Toshiba Semiconductor and Storage|管件|-|在售|-|1350 V|40 A|80 A|2.4V @ 15V，40A|312 ... | ||||||
|
STGFW40V60DF | STMicroelectronics | TO-3PF-3 | IGBT 600V 80A 62.5W TO-3PF | ||
| 參數：STMicroelectronics|管件|-|在售|溝槽型場截止|600 V|80 A|160 A|2.3V @ 15V，40A|62.5 W|456μJ（開... | ||||||
|
BIDW20N60T | Bourns Inc. | TO-247 | IGBT 600V 20A TRENCH TO-247N | ||
| 參數：Bourns Inc.|管件|-|在售|溝槽型場截止|600 V|40 A|60 A|2.4V @ 15V，20A|192 W|1mJ（開）， 300μJ（關）... | ||||||
|
WG50N65DHWQ | WeEn Semiconductors | TO-247-3 | IGBT TRENCH FD ST 650V 91A TO247 | ||
| 參數：WeEn Semiconductors|管件|-|在售|溝槽型場截止|650 V|91 A|200 A|2V @ 15V，50A|278 W|1.7mJ（開），... | ||||||
|
|
RGTH60TS65GC11 | Rohm Semiconductor | TO-247N | 22 | IGBT TRNCH FIELD 650V 58A TO247N | |
| 參數：Rohm Semiconductor|管件|-|不適用于新設計|溝槽型場截止|650 V|58 A|120 A|2.1V @ 15V，30A|197 W|-|標... | ||||||
|
|
GT40QR21(STA1,E,D | Toshiba Semiconductor and Storage | TO-3P（N） | 25 | DISCRETE IGBT TRANSISTOR TO-3PN( | |
| 參數：Toshiba Semiconductor and Storage|管件|-|在售|-|1200 V|40 A|80 A|2.7V @ 15V，40A|230 ... | ||||||
|
|
IGP40N65H5XKSA1 | Infineon Technologies | PG-TO220-3-1 | IGBT 650V 74A TO220-3 | ||
| 參數：Infineon Technologies|管件|TrenchStop?|在售|-|650 V|74 A|120 A|2.1V @ 15V，40A|255 W|... | ||||||
|
FGA40T65SHD | onsemi | TO-3PN | IGBT TRENCH/FS 650V 80A TO3PN | ||
| 參數：onsemi|管件|-|在售|溝槽型場截止|650 V|80 A|120 A|2.1V @ 15V，40A|268 W|1.01mJ（開），297μJ（關）|標... | ||||||
138/223 首頁 上頁 [133] [134] [135] [136] [137] [138] [139] [140] [141] [142] [143] 下頁 尾頁
