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Ixys

Ixys

IXYS Corporation is a global supplier of power management semiconductors with a comprehensive range of Power MOSFET, IGBT, bipolar, and mixed-signal IC solutions that provide improved efficiency and reduced energy costs in a wide range of power system applications.
圖片 型號(hào) 品牌 封裝 數(shù)量 描述 PDF資料
點(diǎn)擊查看IXTX550N055T2參考圖片 IXTX550N055T2 Ixys PLUS247?-3 功率驅(qū)動(dòng)器IC GigaMOS Trench T2 HiperFET PWR MOSFET
參數(shù):制造商:IXYS,RoHS:是,產(chǎn)品:MOSFET Gate Drivers,類型:TrenchT2 GigaMOS,上升時(shí)間:40 ns,下降時(shí)間:230 n...
點(diǎn)擊查看IXTX600N04T2參考圖片 IXTX600N04T2 Ixys PLUS247?-3 功率驅(qū)動(dòng)器IC GigaMOS Trench T2 HiperFET PWR MOSFET
參數(shù):制造商:IXYS,RoHS:是,產(chǎn)品:MOSFET Gate Drivers,類型:TrenchT2 GigaMOS,上升時(shí)間:20 ns,下降時(shí)間:250 n...
IXS839AQ2 Ixys 10-QFN(3x3) 功率驅(qū)動(dòng)器IC 2 / 4 Amps 30V 2.2 / 1.2 Ohm Rds
參數(shù):制造商:IXYS,RoHS:是,產(chǎn)品:Half-Bridge Drivers,類型:Synchronous Buck MOSFET Driver,上升時(shí)間:20...
IXS839AQ2T/R Ixys 10-QFN(3x3) 功率驅(qū)動(dòng)器IC 2 / 4 Amps 30V 2.2 / 1.2 Ohm Rds
參數(shù):制造商:IXYS,RoHS:是,類型:High Side/Low Side,上升時(shí)間:20 ns,下降時(shí)間:15 ns,電源電壓-最。4.5 V,電源電流:4...
IXS839BQ2 Ixys 10-QFN(3x3) 功率驅(qū)動(dòng)器IC 2 / 4 Amps 30V 2.2 / 1.2 Ohm Rds
參數(shù):制造商:IXYS,RoHS:是,產(chǎn)品:Half-Bridge Drivers,類型:Synchronous Buck MOSFET Driver,上升時(shí)間:20...
IXS839BQ2T/R Ixys 10-QFN(3x3) 功率驅(qū)動(dòng)器IC 2 / 4 Amps 30V 2.2 / 1.2 Ohm Rds
參數(shù):制造商:IXYS,RoHS:是,類型:High Side/Low Side,上升時(shí)間:20 ns,下降時(shí)間:15 ns,電源電壓-最。4.5 V,電源電流:4...
點(diǎn)擊查看IXS839S1參考圖片 IXS839S1 Ixys 8-SOIC 功率驅(qū)動(dòng)器IC 2 / 4 Amps 30V 2.2 / 1.2 Ohm Rds
參數(shù):制造商:IXYS,RoHS:是,產(chǎn)品:Half-Bridge Drivers,類型:Synchronous Buck MOSFET Driver,上升時(shí)間:20...
點(diǎn)擊查看IXS839S1T/R參考圖片 IXS839S1T/R Ixys 8-SOIC 功率驅(qū)動(dòng)器IC 2 / 4 Amps 30V 2.2 / 1.2 Ohm Rds
參數(shù):制造商:IXYS,RoHS:是,類型:High Side/Low Side,上升時(shí)間:20 ns,下降時(shí)間:15 ns,電源電壓-最。4.5 V,電源電流:4...
點(diǎn)擊查看IXTK550N055T2參考圖片 IXTK550N055T2 Ixys TO-264(IXTK) 功率驅(qū)動(dòng)器IC GigaMOS Trench T2 HiperFET PWR MOSFET
參數(shù):制造商:IXYS,RoHS:是,產(chǎn)品:MOSFET Gate Drivers,類型:TrenchT2 GigaMOS,上升時(shí)間:40 ns,下降時(shí)間:230 n...
點(diǎn)擊查看IXTK600N04T2參考圖片 IXTK600N04T2 Ixys TO-264(IXTK) 功率驅(qū)動(dòng)器IC GigaMOS Trench T2 HiperFET PWR MOSFET
參數(shù):制造商:IXYS,RoHS:是,產(chǎn)品:MOSFET Gate Drivers,類型:TrenchT2 GigaMOS,上升時(shí)間:20 ns,下降時(shí)間:250 n...
點(diǎn)擊查看IXTN550N055T2參考圖片 IXTN550N055T2 Ixys SOT-227-4,miniBLOC 功率驅(qū)動(dòng)器IC GigaMOS Trench T2 HiperFET PWR MOSFET
參數(shù):制造商:IXYS,RoHS:是,產(chǎn)品:MOSFET Gate Drivers,類型:TrenchT2 GigaMOS,上升時(shí)間:40 ns,下降時(shí)間:230 n...
點(diǎn)擊查看IXTN600N04T2參考圖片 IXTN600N04T2 Ixys SOT-227-4,miniBLOC 877 功率驅(qū)動(dòng)器IC GigaMOS Trench T2 HiperFET PWR MOSFET
參數(shù):制造商:IXYS,RoHS:是,產(chǎn)品:MOSFET Gate Drivers,類型:TrenchT2 GigaMOS,上升時(shí)間:20 ns,下降時(shí)間:250 n...
點(diǎn)擊查看IXI858S1參考圖片 IXI858S1 Ixys 8-SOIC 功率驅(qū)動(dòng)器IC 0.12 Amps 20V
參數(shù):制造商:IXYS,RoHS:是,產(chǎn)品:Half-Bridge Drivers,類型:Gate Driver With Vreg and Charge Pump ...
點(diǎn)擊查看IXI858S1T/R參考圖片 IXI858S1T/R Ixys 8-SOIC 功率驅(qū)動(dòng)器IC 0.12 Amps 20V
參數(shù):制造商:IXYS,RoHS:是,包裝形式:Reel,工廠包裝數(shù)量:2500,...
點(diǎn)擊查看IXI859S1參考圖片 IXI859S1 Ixys 8-SOIC 功率驅(qū)動(dòng)器IC 0.12 Amps 20V
參數(shù):制造商:IXYS,RoHS:是,產(chǎn)品:MOSFET Gate Drivers,類型:Non-Inverting,電源電壓-最大:17 V,電源電壓-最。8.2...
點(diǎn)擊查看IXI859S1T/R參考圖片 IXI859S1T/R Ixys 8-SOIC 功率驅(qū)動(dòng)器IC 0.12 Amps 20V
參數(shù):制造商:IXYS,RoHS:是,包裝形式:Reel,工廠包裝數(shù)量:2500,...
點(diǎn)擊查看IXJ611S1T/R參考圖片 IXJ611S1T/R Ixys 8-SOIC 功率驅(qū)動(dòng)器IC 0.6 Amps 35V 25 Rds
參數(shù):制造商:IXYS,RoHS:是,包裝形式:Tube,工廠包裝數(shù)量:2500,...
點(diǎn)擊查看IXK611S1T/R參考圖片 IXK611S1T/R Ixys 8-SOIC 功率驅(qū)動(dòng)器IC 0.6 Amps 35V 25 Rds
參數(shù):制造商:IXYS,RoHS:是,包裝形式:Tube,工廠包裝數(shù)量:2500,...
IXDR502D1B Ixys 6-VDFN 裸露焊盤 功率驅(qū)動(dòng)器IC 2 Amps V 4 Rds
參數(shù):制造商:IXYS,RoHS:是,類型:High Side/Low Side,上升時(shí)間:12 ns,下降時(shí)間:10 ns,電源電壓-最。4.5 V,電源電流:2...
點(diǎn)擊查看IXDS430SI參考圖片 IXDS430SI Ixys 28-SOIC 功率驅(qū)動(dòng)器IC 30 Amps SelectableV 0.4 Rds
參數(shù):制造商:IXYS,RoHS:是,類型:Low Side Gate Driver,上升時(shí)間:20 ns,下降時(shí)間:18 ns,電源電壓-最小:8.5 V,電源電流...

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