| 圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
|---|---|---|---|---|---|---|
|
NCV8440ASTT1G | ON Semiconductor | TO-261-4，TO-261AA | 1,434 | MOSFET 2.6A, 52V N-CH, CLAM | |
| 參數(shù)：制造商：ON Semiconductor，產(chǎn)品種類：MOSFET，包裝形式：Reel，... | ||||||
|
NDB4050L | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Ch LL FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：N-Channel，汲極/源極擊穿電壓：50 V，閘/源擊穿電壓：+/- 16... | ||||||
|
NDB4060 | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Channel FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：60 V，閘/... | ||||||
|
NDB5060 | Fairchild Semiconductor | TO-263AB | MOSFET DISC BY MFG 2/02 | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：N-Channel，汲極/源極擊穿電壓：60 V，閘/源擊穿電壓：+/- 20... | ||||||
|
NDB5060L | Fairchild Semiconductor | TO-263-3，D2Pak（2 引線 + 接片），TO-263AB | 1,470 | MOSFET N-Ch LL FET Enhancement Mode | |
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：60 V，閘/... | ||||||
|
|
NDB6020 | Fairchild Semiconductor | TO-263AB | MOSFET DISC BY MFG 2/02 | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：N-Channel，汲極/源極擊穿電壓：20 V，閘/源擊穿電壓：+/- 8 ... | ||||||
|
|
NDB6020P | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET P-Ch LL FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：P-Channel，汲極/源極擊穿電壓：- 20 V，... | ||||||
|
NDB6020P_Q | Fairchild Semiconductor | TO-263 | MOSFET P-Ch LL FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：P-Channel，汲極/源極擊穿電壓：- 20 V，閘/源擊穿電壓：+/- ... | ||||||
|
|
NDB6030 | Fairchild Semiconductor | TO-263AB | MOSFET DISC BY MFG 2/02 | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：N-Channel，汲極/源極擊穿電壓：30 V，閘/源擊穿電壓：+/- 20... | ||||||
|
|
NDB6030L | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch LL FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：N-Channel，汲極/源極擊穿電壓：30 V，閘/源擊穿電壓：+/- 16... | ||||||
|
|
NDB6030PL | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET P-Ch LL FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：P-Channel，汲極/源極擊穿電壓：- 30 V，... | ||||||
|
NDB603AL | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：N-Channel，汲極/源極擊穿電壓：30 V，閘/源擊穿電壓：+/- 20... | ||||||
|
|
NDB6050L | Fairchild Semiconductor | TO-263AB | MOSFET DISC BY MFG 2/02 | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：N-Channel，汲極/源極擊穿電壓：50 V，閘/源擊穿電壓：+/- 16... | ||||||
|
NDB6060L | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Ch LL FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：60 V，閘/... | ||||||
|
|
NDB6060L_Q | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch LL FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：N-Channel，汲極/源極擊穿電壓：60 V，閘/源擊穿電壓：+/- 16... | ||||||
|
|
NDB7050 | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET DISC BY MFG 2/02 | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：N-Channel，汲極/源極擊穿電壓：50 V，閘/源擊穿電壓：+/- 20... | ||||||
|
|
NDB7050L | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET DISC BY MFG 2/02 | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：N-Channel，汲極/源極擊穿電壓：50 V，閘/源擊穿電壓：+/- 20... | ||||||
|
|
NDB7051 | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Channel FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：50 V，閘/... | ||||||
|
|
NDB7052L | Fairchild Semiconductor | TO-263AB | MOSFET N-Ch LL FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，RoHS：否，晶體管極性：N-Channel，汲極/源極擊穿電壓：50 V，閘/源擊穿電壓：+/- 16... | ||||||
|
|
NDB7060 | Fairchild Semiconductor | D2PAK（TO-263） | MOSFET N-Channel FET Enhancement Mode | ||
| 參數(shù)：制造商：Fairchild Semiconductor，產(chǎn)品種類：MOSFET，RoHS：是，晶體管極性：N-Channel，汲極/源極擊穿電壓：60 V，閘/... | ||||||
53/1313 首頁 上頁 [48] [49] [50] [51] [52] [53] [54] [55] [56] [57] [58] 下頁 尾頁
