| 圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
|---|---|---|---|---|---|---|
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FS450R12OE4B81BPSA1 | Infineon Technologies | AG-ECONOPP | MEDIUM POWER ECONO | ||
| 參數(shù)：Infineon Technologies|托盤|EconoPACK?+|在售|溝槽型場(chǎng)截止|三相反相器|1200 V|450 A|20 mW|2.1V @ 1... | ||||||
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FF1200R12IE5PBPSA1 | Infineon Technologies | 模塊 | 1 | IGBT MOD 1200V 2400A 20MW | |
| 參數(shù)：Infineon Technologies|托盤|PrimePACK?2|在售|溝槽型場(chǎng)截止|半橋|1200 V|2400 A|20 mW|2.15V @ 15... | ||||||
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FF1500R12IE5BPSA1 | Infineon Technologies | 模塊 | IGBT MOD 1200V 1500A 20MW | ||
| 參數(shù)：Infineon Technologies|托盤|PrimePACK?3+ B|在售|溝槽型場(chǎng)截止|2 個(gè)獨(dú)立式|1200 V|1500 A|20 mW|2.1... | ||||||
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FF1500R17IP5BPSA1 | Infineon Technologies | 模塊 | IGBT MOD 1700V 1500A 20MW | ||
| 參數(shù)：Infineon Technologies|托盤|PrimePACK?3+|在售|溝槽型場(chǎng)截止|2 個(gè)獨(dú)立式|1700 V|1500 A|20 mW|2.2V ... | ||||||
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FF1800R12IE5PBPSA1 | Infineon Technologies | 模塊 | IGBT MOD 1200V 1800A 20MW | ||
| 參數(shù)：Infineon Technologies|托盤|PrimePACK?3+|在售|溝槽型場(chǎng)截止|2 個(gè)獨(dú)立式|1200 V|1800 A|20 mW|2.15V... | ||||||
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FZ1500R33HL3BPSA1 | Infineon Technologies | 模塊 | 1 | IGBT MODULE 3300V 1500A | |
| 參數(shù)：Infineon Technologies|托盤|-|不適用于新設(shè)計(jì)|溝槽型場(chǎng)截止|全橋|3300 V|1500 A|17000 W|2.85V @ 15V，1... | ||||||
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IXYN100N65C3H1 | IXYS | SOT-227B | 2 | IGBT MOD 650V 166A 600W SOT227B | |
| 參數(shù)：IXYS|管件|XPT?, GenX3?|在售|PT|單路|650 V|166 A|600 W|2.3V @ 15V，70A|50 μA|4.98 nF @ 2... | ||||||
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VS-GT90DA120U | Vishay General Semiconductor - Diodes Division | SOT-227 | 160 | SOT-227 - SINGLE SWITCH IGBT + A | |
| 參數(shù)：Vishay General Semiconductor - Diodes Division|管件|-|在售|溝槽型場(chǎng)截止|單路|1200 V|169 A|78... | ||||||
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IXYN110N120C4 | IXYS | SOT-227 | IGBT 1200V 110A GEN4 XPT SOT227B | ||
| 參數(shù)：IXYS|管件|XPT?|在售|-|單路|1200 V|220 A|830 W|2.4V @ 15V，110A|50 μA|5.42 nF @ 25 V|標(biāo)準(zhǔn)|... | ||||||
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VS-ENV020F65U | Vishay General Semiconductor - Diodes Division | - | 10 | POWER MODULE | |
| 參數(shù)：Vishay General Semiconductor - Diodes Division|盒|*|在售|-|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
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VS-ENV020M120M | Vishay General Semiconductor - Diodes Division | - | 10 | POWER MODULE | |
| 參數(shù)：Vishay General Semiconductor - Diodes Division|盒|*|在售|-|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
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FP10R12W1T4B3BOMA1 | Infineon Technologies | 模塊 | IGBT MOD 1200V 20A 105W | ||
| 參數(shù)：Infineon Technologies|散裝|EasyPIM?|在售|溝槽型場(chǎng)截止|三相反相器|1200 V|20 A|105 W|2.25V @ 15V，... | ||||||
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IXYN80N90C3H1 | IXYS | SOT-227B | IGBT MOD 900V 115A 500W SOT227B | ||
| 參數(shù)：IXYS|管件|XPT?, GenX3?|在售|-|單路|900 V|115 A|500 W|2.7V @ 15V，80A|25 μA|4.55 nF @ 25... | ||||||
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FP10R12W1T7PB11BPSA1 | Infineon Technologies | AG-EASY1B | LOW POWER EASY AG-EASY1B-2 | ||
| 參數(shù)：Infineon Technologies|托盤|EasyPIM?|在售|溝槽型場(chǎng)截止|三相反相器|1200 V|10 A|20 mW|-|4.5 μA|189... | ||||||
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A1C15S12M3-F | STMicroelectronics | ACEPACK? 1 | IGBT MOD 1200V 15A ACEPACK1 | ||
| 參數(shù)：STMicroelectronics|托盤|-|在售|溝槽型場(chǎng)截止|三相反相器，帶制動(dòng)器|1200 V|15 A|142.8 W|2.45V @ 15V，15A... | ||||||
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VS-ENY050C60 | Vishay General Semiconductor - Diodes Division | - | 10 | POWER MODULE | |
| 參數(shù)：Vishay General Semiconductor - Diodes Division|盒|*|在售|-|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
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FS50R12W1T7BOMA1 | Infineon Technologies | AG-EASY1B | LOW POWER EASY AG-EASY1B-1 | ||
| 參數(shù)：Infineon Technologies|托盤|EasyPACK?|在售|溝槽型場(chǎng)截止|三相反相器|1200 V|50 A|20 mW|-|7.9 μA|11... | ||||||
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VS-ENM040M60P | Vishay General Semiconductor - Diodes Division | - | 10 | POWER MODULE | |
| 參數(shù)：Vishay General Semiconductor - Diodes Division|盒|*|在售|-|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
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VS-ENZ025C60N | Vishay General Semiconductor - Diodes Division | - | 10 | POWER MODULE | |
| 參數(shù)：Vishay General Semiconductor - Diodes Division|盒|*|在售|-|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
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FS50R12W1T7PB11BPSA1 | Infineon Technologies | - | LOW POWER EASY AG-EASY1B-711 | ||
| 參數(shù)：Infineon Technologies|托盤|*|在售|-|-|-|-|-|-|-|-|-|-|-|-|-|-|... | ||||||
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