Vishay/Siliconix
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Vishay/Siliconix功率MOSFET晶體管和集成電路 (IC)用于管理和轉(zhuǎn)換計(jì)算機(jī)、手機(jī)和通信基礎(chǔ)架構(gòu)中的電源,也可用計(jì)算機(jī)磁盤驅(qū)動(dòng)器和汽車系統(tǒng)中的運(yùn)動(dòng)控制。 Vishay/Siliconix模擬開關(guān)IC用于對(duì)儀表儀器和多種工業(yè)產(chǎn)品中的模擬信號(hào)進(jìn)行感應(yīng)、開關(guān)和路徑設(shè)定。 |
圖片 | 型號(hào) | 品牌 | 封裝 | 數(shù)量 | 描述 | PDF資料 |
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IRFD9110 | Vishay/Siliconix | 4-HVMDIP | MOSFET P-Chan 100V 0.7 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFD9113 | Vishay/Siliconix | 4-HVMDIP | MOSFET P-Chan 100V 0.7 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:- 60 V,漏極連續(xù)電流:- 0.6 A,電阻... | ||||||
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IRFD9120 | Vishay/Siliconix | 4-HVMDIP | MOSFET P-Chan 100V 1.0 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFD9123 | Vishay/Siliconix | 4-HVMDIP | MOSFET P-Chan 100V 1.0 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,包裝形式:Tube,工廠包裝數(shù)量:2500,... | ||||||
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IRFD9123PBF | Vishay/Siliconix | 4-HVMDIP | MOSFET 60 Volt 1.0 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,包裝形式:Tube,... | ||||||
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IRFD9210 | Vishay/Siliconix | 4-DIP(0.300",7.62mm) | MOSFET P-Chan 200V 0.4 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFD9220 | Vishay/Siliconix | 4-HVMDIP | MOSFET P-Chan 200V 0.56 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:P-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFDC20 | Vishay/Siliconix | 4-HVMDIP | MOSFET N-Chan 600V 0.32 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:600 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI510G | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 100V 4.5 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI510GPBF | Vishay/Siliconix | TO-220-3 全封裝,隔離接片 | 1,992 | MOSFET N-Chan 100V 4.5 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI520G | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 100V 7.2 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI520GPBF | Vishay/Siliconix | TO-220-3 全封裝,隔離接片 | 1,085 | MOSFET N-Chan 100V 7.2 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI530G | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 100V 9.7 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI530GPBF | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 100V 9.7 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI540G | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 100V 17 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI540GPBF | Vishay/Siliconix | TO-220-3 全封裝,隔離接片 | 8,815 | MOSFET N-Chan 100V 17 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:100 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI614G | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 250V 2.1 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI614GPBF | Vishay/Siliconix | TO-220-3 全封裝,隔離接片 | MOSFET N-Chan 250V 2.1 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:250 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI620G | Vishay/Siliconix | TO-220-3 | MOSFET N-Chan 200V 4.1 Amp | ||
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:否,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... | ||||||
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IRFI620GPBF | Vishay/Siliconix | TO-220-3 全封裝,隔離接片 | 896 | MOSFET N-Chan 200V 4.1 Amp | |
參數(shù):制造商:Vishay,產(chǎn)品種類:MOSFET,RoHS:是,晶體管極性:N-Channel,汲極/源極擊穿電壓:200 V,閘/源擊穿電壓:+/- 20 V,漏... |
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